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  • Bang, Jae Hoon, et al. "Effect of microwave irradiation on the electrical and optical properties of SnO2 thin films." Ceramics International 45.6 (2019): 7723-7729.

    Kim, Sangwoo, et al. "Synthesis, Characterization and Gas-Sensing Properties of Pristine and SnS 2 Functionalized TeO 2 Nanowires." Metals and Materials International 25.3 (2019): 805-813.

  • Lee, Jaemin, et al. "Characteristics of low-κ SiOC films deposited via atomic layer deposition." Thin Solid Films 645 (2018): 334-339.

    Ham, Giyul, et al. "Role of a PVA layer During lithography of SnS 2 thin Films Grown by Atomic layer Deposition." Journal of the Semiconductor & Display Technology 17.3 (2018): 41-45.

    Choi, Hyeongsu, et al. "Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics." Nanotechnology 29.21 (2018): 215201.

    Jang, Woochool, et al. "Remote plasma atomic layer deposition of silicon nitride with bis (dimethylaminomethyl-silyl) trimethylsilyl amine and N2 plasma for gate spacer." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36.3 (2018): 031514.

    Kim, Hyunjung, et al. "Effect of adding an insulator between metal and semiconductor layers on contact resistance." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 36.3 (2018): 032202.

    Lee, Kunyoung, et al. "Leakage current suppression in spatially controlled Si-doped ZrO2 for capacitors using atomic layer deposition." Thin Solid Films 657 (2018): 1-7.

    Jo, HeeGoo, et al. "Characterization of Ti3+-doped TiO2 based composite electrode for lithium polymer secondary batteries." Nanotechnology 29.44 (2018): 445402.

    Park, Hyunwoo, et al. "Effect of ozone concentration on atomic layer deposited tin oxide." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36.5 (2018): 051509.

    Kang, Taehee, et al. "Tunneling Rectification in Ring Shaped Nanogaps." 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, 2018.

    Lim, Heewoo, et al. "Postdeposition annealing on VO2 films for resistive random-access memory selection devices." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36.5 (2018): 051501.

    Kim, Hye Jung, Hyeongtag Jeon, and Young-Han Shin. "H2S adsorption process on (0001) α-quartz SiO2 surfaces." Journal of Applied Physics 124.11 (2018): 115301.

    Shin, Seokyoon, et al. "Density control of ZnO nanorod arrays using ultrathin seed layer by atomic layer deposition." Journal of Ceramic Processing Research 19.5 (2018): 401-406.

    Kang, Taehee, et al. "Terahertz rectification in ring-shaped quantum barriers." Nature communications 9.1 (2018): 4914.

    Park, Jingyu, et al. "Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices." physica status solidi (a) 215.23 (2018): 1800181.

  • Kim, Hwanwoo, et al. "Dielectric barrier characteristics of Si-rich silicon nitride films deposited by plasma enhanced atomic layer deposition." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35.1 (2017): 01A101.

    Seo, Wondeok, et al. "Thickness-dependent structure and properties of SnS2 thin films prepared by atomic layer deposition." Japanese Journal of Applied Physics 56.3 (2017): 031201.

    Jeon, Heeyoung, et al. "Resistive switching behaviors of Ti nano-layer embedded TaOx-based devices." Current Applied Physics 17.2 (2017): 230-234.

    Lee, Sang Yeon, et al. "Investigation of ultrathin Pt/ZrO2?Al2O3?ZrO2/TiN DRAM capacitors Schottky barrier height by internal photoemission spectroscopy." Current Applied Physics 17.2 (2017): 267-271.

    Lee, Juhyun, et al. "Improved electrical properties of atomic layer deposited tin disulfide at low temperatures using ZrO2 layer." AIP Advances 7.2 (2017): 025311.

    Shin, Seokyoon, et al. "Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 35.2 (2017): 021514.

    Lee, Seungjin, et al. "Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing." AIP Advances 7.4 (2017): 045307.

    Ham, Gi Yul, et al. "Solar cell and method of fabricating the same." U.S. Patent No. 9,666,737. 30 May 2017.

    Kim, Hyunjung, et al. "The annealing effect on work function variation of WNxCy films deposited by remote plasma atomic layer deposition." physica status solidi (a) 214.7 (2017): 1700010.

    Han, Yafang, et al. "2017 China-Japan-Korea Multifunctional Nanomaterials Seminar." (2017).

    Park, Jae-Hyung, et al. "Investigation of the barrier properties of copper-vanadium alloys with a sub-tantalum layer on low-k dielectrics." Journal of Alloys and Compounds 722 (2017): 259-264.

    Yoo, Il-Han, et al. "Plasmon-enhanced ZnO nanorod/Au NPs/Cu 2 O structure solar cells: Effects and limitations." Korean Journal of Chemical Engineering 34.12 (2017): 3200-3207.

  • Ham, Giyul, et al. "Engineering the crystallinity of tin disulfide deposited at low temperatures." RSC Advances 6.59 (2016): 54069-54075.

    Yoo, Il-Han, et al. "Uniform ZnO nanorod/Cu 2 O core?shell structured solar cells by bottom-up RF magnetron sputtering." RSC Advances 6.86 (2016): 82900-82906.

    Choi, Hagyoung, et al. "Fast spatial atomic layer deposition of Al2O3 at low temperature (< 100° C) as a gas permeation barrier for flexible organic light-emitting diode displays." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34.1 (2016): 01A121.

    Oh, Juhong, et al. "Characteristics of Al2O3/ZrO2 laminated films deposited by ozone-based atomic layer deposition for organic device encapsulation." Thin Solid Films 599 (2016): 119-124.

    Lee, Inhye, et al. "Improvement of the thermal stability of nickel silicide using a ruthenium interlayer deposited via remote plasma atomic layer deposition." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 34.3 (2016): 031502.

    Ham, Gi Yul, et al. "Solar cell and method of fabricating the same." U.S. Patent No. 9,466,744. 11 Oct. 2016.

    Song, Hyoseok, et al. "The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications." Thin Solid Films 619 (2016): 317-322.

    Oh, Tae-Kyung, et al. "Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature." Applied Physics Letters 109.24 (2016): 242104.

  • Park, Jingyu, et al. "Stabilization of Ni conductive filaments using NH 3 plasma treatment for electrochemical metallization memory." RSC Advances 5.84 (2015): 68900-68905.

    Park, Jingyu, et al. "Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal?organic chemical vapor deposition using a Ni (iPr-DAD) 2 precursor." Japanese Journal of Applied Physics 54.2 (2015): 025501.

    Kim, Jinho, et al. "Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni (i Pr-DAD) 2." Journal of the Korean Physical Society 66.5 (2015): 821-827.

    Kang, Chunho, et al. "Growth behavior and structural characteristics of TiO2 thin films using (CpN) Ti (NMe2) 2 and oxygen remote plasma." physica status solidi (a) 212.3 (2015): 674-679.

    Hong, Junghyup, et al. "Endurance improvement due to rapid thermal annealing (RTA) of a TaO x thin film in an oxygen ambient." Journal of the Korean Physical Society 66.5 (2015): 721-725.

    Choi, Hagyoung, et al. "71.1: High Throughput and Scalable Spatial Atomic Layer Deposition of Al2O3 as a Moisture Barrier for Flexible OLED Display." SID Symposium Digest of Technical Papers. Vol. 46. No. 1. 2015.

    Cho, Byung Su, Hyeong Tag Jeon, and Jae Sang Lee. "Thin film transistor array panel." U.S. Patent No. 9,111,789. 18 Aug. 2015.

    Jeon, Heeyoung, et al. "Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments." Current Applied Physics 15.9 (2015): 1005-1009.

    Kim, Hyunjung, et al. "Characteristics of WN {sub x} C {sub y} films deposited using remote plasma atomic layer deposition with ({sup Me} Cp) W (CO){sub 2}(NO) for Cu diffusion barrier." Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films 33.5 (2015).

    Kim, Hyunjung, et al. "Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp) W (CO) 2 (NO) for Cu diffusion barrier." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 33.5 (2015): 05E111.

    Jeon, Heeyoung, et al. "Nonlinear and complementary resistive switching behaviors of Au/Ti/TaOx/TiN devices dependent on Ti thicknesses." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 33.5 (2015): 051204.

    Han, Dongsuk, et al. "Improvement in the Positive Bias Temperature Stability of SnO x-Based Thin Film Transistors by Hf and Zn Doping." Journal of nanoscience and nanotechnology 15.10 (2015): 7606-7610.

    Jang, Woochool, et al. "The effect of plasma power on the properties of low?temperature silicon nitride deposited by RPALD for a gate spacer." physica status solidi (a) 212.12 (2015): 2785-2790.

  • Park, Jingyu, et al. "Spatially confined electric field effect for improved resistive switching behavior of a Ni/Ta-embedded TaO x/NiSi device." RSC Advances 4.105 (2014): 61064-61067.

    Cho, Byungsu, et al. "Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier." Applied Physics Letters 104.4 (2014): 042103.

    Jung, Hyunsoo, et al. "Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition." Journal of Applied Physics 115.7 (2014): 073502.

    Lee, Sanghun, et al. "Permeation barrier properties of an Al2O3/ZrO2 multilayer deposited by remote plasma atomic layer deposition." Current Applied Physics 14.4 (2014): 552-557.

    Jeon, Heeyoung, et al. "Resistive switching of a TaOx/TaON double layer via ionic control of carrier tunneling." Applied Physics Letters 104.15 (2014): 151603.

    Jeon, Heeyoung, et al. "Detection of oxygen ion drift in Pt/Al2O3/TiO2/Pt RRAM using interface-free single-layer graphene electrodes." Carbon 75 (2014): 209-216.

    Jeon, Heeyoung, et al. "Stabilized resistive switching behaviors of a Pt/TaOx/TiN RRAM under different oxygen contents." physica status solidi (a) 211.9 (2014): 2189-2194.

    Yang, Heewang, et al. "Effect of Au interlayer thickness on the structural, electrical, and optical properties of GZO/Au/GZO multilayers." Current Applied Physics 14.9 (2014): 1331-1334.

    Jang, Woochool, et al. "Temperature dependence of silicon nitride deposited by remote plasma atomic layer deposition." physica status solidi (a) 211.9 (2014): 2166-2171.

    Park, Jingyu, et al. "Improvement of thermal stability of nickel silicide film using NH3 plasma treatment." Japanese Journal of Applied Physics 53.9 (2014): 095506.

    Jeon, Hyeong Tag, et al. "Photoelectrode for photoelectrochemical cell, method of manufacturing the same, and photoelectrochemical cell including the same." U.S. Patent Application No. 14/158,175.

    Jeon, Hyeong Tag, et al. "Nanocomposite structure, electrode including the nanocomposite structure, manufacturing method of the electrode, and electrochemical device including the electrode." U.S. Patent Application No. 14/158,185.

    Jeon, Hyeong Tag, et al. "Nanorod and method of manufacturing the same." U.S. Patent Application No. 13/891,998.

    Lee, Sang Yeon, et al. "Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors." Applied Physics Letters 105.20 (2014): 201603.

    Yang, Heewang, et al. "Electrical behavior of amorphous indium?gallium?zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer." Current Applied Physics 14.12 (2014): 1767-1770.

    Kim, Jinwoo, et al. "Epitaxial growth of three-dimensionally Mesostructured single-crystalline Cu2O via Templated electrodeposition." Chemistry of Materials 26.24 (2014): 7051-7058.

  • Kurian, Sajith, et al. "Formation of a crystalline nanotube?nanoparticle hybrid by post water-treatment of a thin amorphous TiO 2 layer on a TiO 2 nanotube array as an efficient photoanode in dye-sensitized solar cells." Journal of Materials Chemistry A 1.13 (2013): 4370-4375.

    Shin, Seokyoon, et al. "Atomic layer deposition: overview and applications." Korean Journal of Materials Research 23.8 (2013): 405-422.

    Lee, Jaesang, et al. "Deposition temperature dependence of titanium oxide thin films grown by remote?plasma atomic layer deposition." physica status solidi (a) 210.2 (2013): 276-284.

    Choi, Hagyoung, et al. "Moisture barrier properties of Al2O3 films deposited by remote plasma atomic layer deposition at low temperatures." Japanese Journal of Applied Physics 52.3R (2013): 035502.

    Cho, Byungsu, et al. "Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface." Applied Physics Letters 102.10 (2013): 102108.

    Cho, Byungsu, et al. "Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface." Applied Physics Letters 102.10 (2013): 102108.

    Park, Jingyu, et al. "Characteristic of Ru Thin Film Deposited by ALD." 한국진공학회 학술발표회초록집 (2013): 78-78.

    Kurian, Sajith, Hyungtak Seo, and Hyeongtag Jeon. "Significant enhancement in visible light absorption of TiO2 nanotube arrays by surface band gap tuning." The Journal of Physical Chemistry C 117.33 (2013): 16811-16819.

    Ham, Giyul, et al. "Characteristics of SnSx by Atomic Layer Deposition for CIGS solar cells." Ecs Transactions 58.10 (2013): 87-94.

    Kim, Hyungchul, et al. "Investigation of the Flatband Voltage (V FB) Shift of Al2O3 on N2 Plasma Treated Si Substrate." Journal of nanoscience and nanotechnology 13.9 (2013): 6275-6279.

    Parsons, Gregory N., et al. "History of atomic layer deposition and its relationship with the American Vacuum Society." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 31.5 (2013): 050818.

    Ham, Giyul, et al. "Tuning the electronic structure of tin sulfides grown by atomic layer deposition." ACS applied materials & interfaces 5.18 (2013): 8889-8896.

    Yoo, Dongjun, et al. "Influence of different annealing ambients on the properties of zinc sulfide prepared by atomic layer deposition." Japanese Journal of Applied Physics 52.10S (2013): 10MB19.

    Jung, Hyunsoo, et al. "Radio frequency plasma power dependence of the moisture permeation barrier characteristics of Al2O3 films deposited by remote plasma atomic layer deposition." Journal of Applied Physics 114.17 (2013): 173511.

  • Fang, Ziwen, et al. "Gadolinium nitride films deposited using a PEALD based process." Journal of Crystal Growth 338.1 (2012): 111-117.

    Bang, Seokhwan, et al. "Dual optical functionality of local surface plasmon resonance for RuO 2 nanoparticle?ZnO nanorod hybrids grown by atomic layer deposition." Journal of Materials Chemistry 22.28 (2012): 14141-14148.

    Lee, Jaesang, et al. "Effect of crystal structure and grain size on photo-catalytic activities of remote-plasma atomic layer deposited titanium oxide thin film." ECS Journal of Solid State Science and Technology 1.4 (2012): Q63-Q69.

    Lee, Jaesang, et al. "CHARACTERISATION OF THE Co FILM DEPOSITED BY MOCVD USING DICOBALT(HEXACARBONYL) TERT-BUTYLACETYLENE AND THE CoSi 2 FILM FORMED BY A TWO-STEP ANNEALING PROCESS WITH A Ti CAPPING LAYER." Journal of Ceramic Processing Research 13.5 (2012): 595-600.

    Park, Taeyong, et al. "Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30.1 (2012): 01A139.

    Lee, Jaesang, et al. "Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 30.1 (2012): 01A104.

    Park, Taeyong, et al. "The properties of Ru films deposited by remote plasma atomic layer deposition on Ar plasma?treated SiO2." physica status solidi (a) 209.2 (2012): 302-305.

    Baek, Seung-Jun, et al. "Properties of Flexible Phosphorescence Polymer Light Emitting Diodes Coated on Polyethylenenaphthalate Plastic Substrates." Journal of nanoscience and nanotechnology 12.2 (2012): 1585-1588.

    Lee, Seungjun, et al. "AZO/Au/AZO multilayer as a transparent conductive electrode." physica status solidi (a) 209.4 (2012): 698-701.

    Lee, Hak-Joo, Hyeongtag Jeon, and Wook-Seong Lee. "Synergistic interaction between substrate and seed particles in ultrathin ultrananocrystalline diamond film nucleation on SiO2 with controlled surface termination." The Journal of Physical Chemistry C 116.16 (2012): 9180-9188.

    Jeon, Hyeong-Tag, et al. "Apparatus for generating remote plasma." U.S. Patent No. 8,207,470. 26 Jun. 2012.

    Lee, Jaesang, et al. "The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition." Journal of nanoscience and nanotechnology 12.7 (2012): 5494-5499.

    Kim, Jihoon, et al. "A study on H 2 plasma treatment effect on a-IGZO thin film transistor." Journal of Materials Research 27.17 (2012): 2318-2325.

    Lee, Hyerin, et al. "Effects of a SiO 2 buffer layer on the flatband voltage shift of La 2 O 3 gate dielectric grown by using remote plasma atomic layer deposition." Journal of the Korean Physical Society 61.7 (2012): 1051-1055.

    Bang, Seokhwan, et al. "Photocurrent detection of chemically tuned hierarchical ZnO nanostructures grown on seed layers formed by atomic layer deposition." Nanoscale research letters 7.1 (2012): 290.

  • Lahiri, Indranil, et al. "Ultrathin alumina-coated carbon nanotubes as an anode for high capacity Li-ion batteries." Journal of Materials Chemistry 21.35 (2011): 13621-13626.

    Kim, Hyungchul, et al. "Effect of DC bias on the plasma properties in remote plasma atomic layer deposition and its application to HfO2 thin films." Journal of The Electrochemical Society 158.1 (2011): H21-H24.

    Lee, Hak-Joo, Hyeongtag Jeon, and Wook-Seong Lee. "Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column." Journal of Applied Physics 109.2 (2011): 023303.

    Park, Soyeon, et al. "The effect of annealing ambient on the characteristics of an indium?gallium?zinc oxide thin film transistor." Journal of nanoscience and nanotechnology 11.7 (2011): 6029-6033.

    Jang, Yong Woon, et al. "Microstructural characterization at the interface of Al2O3/ZnO/Al2O3 thin films grown by atomic layer deposition." physica status solidi (b) 248.7 (2011): 1634-1638.

    Jang, Moon Hyung, et al. "Luminescent mechanism of Eu3+-doped epitaxial Gd2O3 films grown on a Si (111) substrate using an effusion cell." Current Applied Physics 11.4 (2011): 1001-1005.

    Bang, Seokhwan, et al. "The effects of post-annealing on the performance of ZnO thin film transistors." Thin Solid Films 519.22 (2011): 8109-8113.

    Lee, Hak-Joo, Hyeongtag Jeon, and Wook-Seong Lee. "Ultrathin ultrananocrystalline diamond film synthesis by direct current plasma-assisted chemical vapor deposition." Journal of Applied Physics 110.8 (2011): 084305.

    Ko, Youngbin, et al. "The effects of a HfO2 buffer layer on Al2O3?passivated indium?gallium?zinc?oxide thin film transistors." physica status solidi (RRL)?Rapid Research Letters 5.10?11 (2011): 403-405.

    Gong, Su Cheol, et al. "Properties of blue polymer light emitting diodes according to the doping concentrations of FIrpic phosphorescence." Molecular Crystals and Liquid Crystals 551.1 (2011): 14-23.

    Lee, Jaesang, et al. "Low Resistive and Uniform CoSi 2 Formation with Ti Capping Layer." AIP Conference Proceedings. Vol. 1399. No. 1. AIP, 2011.

  • Jeong, Wooho, et al. "Characteristics of HfN films deposited by using remote plasma-enhanced atomic layer deposition." Journal of the Korean Physical Society 56.3 (2010): 905-910.

    Kim, Hyungchul, et al. "The effects of annealing ambient on the characteristics of La2O3 films deposited by RPALD." Journal of The Electrochemical Society 157.4 (2010): H479-H482.

    Jeon, Hyeongtag. "DC biased remote plasma atomic layer deposition and its applications." Meeting Abstracts. No. 20. The Electrochemical Society, 2010.

    Wang, Seok-Joo, et al. "Investigation of the surface chemical and electronic states of pyridine-capped CdSe nanocrystal films after plasma treatments using H 2, O 2, and Ar gases." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 28.4 (2010): 559-563.

    Lee, Seungjun, et al. "The effect of oxygen remote plasma treatment on ZnO TFTs fabricated by atomic layer deposition." physica status solidi (a) 207.8 (2010): 1845-1849.

    Jang, Yong Woon, et al. "Role of postannealing temperature on the microstructure of Al2O3/ZnO thin films grown by atomic layer deposition for TFT applications." physica status solidi (a) 207.9 (2010): 2185-2189.

    Kim, Yongchan, et al. "Effects of an Al 2 O 3 capping layer on La 2 O 3 deposited by remote plasma atomic layer deposition." Journal of Materials Research 25.10 (2010): 1898-1903.

    Kim, Hyungchul, and Hyeongtag Jeon. "DC Biased Remote Plasma Atomic Layer Deposition and Its Applications." ECS Transactions 33.2 (2010): 395-401.

    Gong, Su Cheol, et al. "Post annealing effect of flexible polymer solar cells to improve their electrical properties." Current Applied Physics 10.4 (2010): e192-e196.

    Lee, Hak-Joo, et al. "Some novel aspects of nanocrystalline diamond nucleation and growth by direct current plasma assisted chemical vapor deposition." Diamond and Related Materials 19.11 (2010): 1393-1400.

    Kim, Hyuncheol, et al. "A study of the incorporation of conducting materials into direct-patternable SnO2 thin films formed by photochemical metal-organic deposition." Journal of the Ceramic Society of Japan 118.1383 (2010): 1009-1012.

    Gong, Su Cheol, et al. "Effects of atomic layer deposition temperatures on structural and electrical properties of ZnO films and its thin film transistors." Metals and Materials International 16.6 (2010): 953-958.

    Kim, Hyungchul, et al. "The effects of RF power on the interfacial property between Al2O3 and Si3N4 and on the memory property in a MANOS structure." Journal of Physics D: Applied Physics 43.50 (2010): 505301.

    Choi, Yong-June, et al. "The electrical and optical properties of direct-patternable SnO2 thin films containing Pt nanoparticles at various annealing temperatures." Surface and Coatings Technology 205.7 (2010): 2649-2653.

  • Kim, Hyuncheol, et al. "Incorporation of carbon nanotube into direct-patternable ZnO thin film formed by photochemical solution deposition." Ceramics International 35.1 (2009): 131-135.

    Park, Hyeong-Ho, et al. "Study of the electrical enhancement of direct-patternable Ag-nanostructures embedded SnO2 thin films prepared by photochemical metal-organic deposition." Journal of the Ceramic Society of Japan 117.1365 (2009): 608-611.

    Gong, Su-Cheol, et al. "Dependence of $ O_2 $ Plasma Treatment of Cross-Linked PVP Insulator on the Electrical Properties of Organic-Inorganic Thin Film Transistors with ZnO Channel Layer." Journal of the Microelectronics and Packaging Society 16.2 (2009): 21-25.

    Gong, Su-Cheol, et al. "Staggered and Inverted Staggered Type Organic-Inorganic Hybrid TFTs with ZnO Channel Layer Deposited by Atomic Layer Deposition." Journal of the Microelectronics and Packaging Society 16.4 (2009): 17-22.

    Jeon, Hyeong-Tag, et al. "Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias." U.S. Patent Application No. 11/658,961.

    Lee, Young Jin, et al. "Method for manufacturing metal silicide layer in a semiconductor device." U.S. Patent Application No. 12/169,790.

    Chung, K. B., et al. "Instability of incorporated nitrogen in HfO 2 films grown on strained Si 0.7 Ge 0.3 layers." Applied Physics Letters 94.4 (2009): 042907.

    Hyde, G. K., et al. "Atomic layer deposition and biocompatibility of titanium nitride nano-coatings on cellulose fiber substrates." Biomedical materials 4.2 (2009): 025001.

    Bang, Seokhwan, et al. "Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric." Semiconductor Science and Technology 24.2 (2008): 025008.

    Kwon, Semyung, et al. "Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures." Semiconductor Science and Technology 24.3 (2009): 035015.

    Choi, Yong-June, et al. "Fabrication and characterization of direct-patternable ZnO films containing Pt nanoparticles." Japanese Journal of Applied Physics 48.3R (2009): 035504.

    Kim, Honggyu, et al. "Pt nanocrystals embedded in remote plasma atomic-layer-deposited HfO2 for nonvolatile memory devices." Electrochemical and Solid-State Letters 12.4 (2009): H92-H94.

    Lee, Jaesang, et al. "Formation of an Epitaxial CoSi2 Layer with Reduced Oxygen Contamination." Journal of The Electrochemical Society 156.5 (2009): H352-H355.

    Lee, Jaesang, et al. "Epitaxial CoSi 2 formation using an oxynitride buffer layer." Journal of Materials Research 24.8 (2009): 2705-2710.

    Lee, Hak Min, et al. "Preparation and characterization of phosphorescence organic light-emitting diodes using poly-vinylcarbazole: tris (2-phenylpyridine) iridium (III) emission layer." Optical Engineering 48.10 (2009): 104001.

    Choi, Sun Gyu, et al. "Analysis of Layers and Interfaces in a Multi-Layer System and Schematic Simulation Using Angle-Resolved X-ray Photoelectron Spectroscopy." Journal of Computational and Theoretical Nanoscience 6.11 (2009): 2398-2401.

    Bang, Seokhwan, et al. "Investigation of the effects of interface carrier concentration on ZnO thin film transistors fabricated by atomic layer deposition." Journal of Physics D: Applied Physics 42.23 (2009): 235102.

    Park, Jong-Keuk, et al. "Structure, hardness and thermal stability of TiAlBN coatings grown by alternating deposition of TiAlN and BN." Vacuum 84.4 (2009): 483-487.

  • Shin, Sang-Baie, et al. "Preparation and Characterization of White Polymer Light Emitting Diodes Using PFO: MEH-PPV." Journal of the Microelectronics and Packaging Society 15.4 (2008): 59-64.

    Lee, Hak-Min, et al. "Properties of Polymer Light Emitting Diodes Using PFO: MEH-PPV Emission Layer and Hole Blocking Layer." Journal of the Semiconductor & Display Technology 7.2 (2008): 49-53.

    Jeon, Chang-Duk, et al. "Fabrication and Characterization of Orange Polymer Light Emitting Diodes by Concentration of MEH-PPV." Proceedings of the KAIS Fall Conference. The Korea Academia-Industrial cooperation Society, 2008.

    Shin, Sang-Baie, et al. "PFO: MEH-PPVE 015 White PLED9|| X| SHE 5337." Journal of the Microelectronics & Packaging Society 15.4 (2008): 59-64.

    Yim, C. J., et al. "Change in band alignment of Hf O 2 films with annealing treatments." Applied Physics Letters 92.1 (2008): 012922.

    Chung, K. B., et al. "Effects of postnitridation annealing on band gap and band offsets of nitrided Hf-silicate films." Applied Physics Letters 92.2 (2008): 022907.

    Choi, Sun Gyu, et al. "Electrical enhancement of direct-patternable SnO₂ thin films by incorporation of Ag nanoparticles." 한국진공학회 학술발표회초록집 (2008): 346-346.

    Kim, Seokhoon, et al. "Atomic Layer Deposition of HfO2 Thin Films on Ultrathin SiO2 Formed by Remote Plasma Oxidation." Journal of Korean Physical Society 52 (2008): 1103.

    Hong, Hyungseok, et al. "Characteristics of atomic-layer-deposited HfO2 films by using a remote plasma on pre-deposited Hf metal layer." Journal of Korean Physical Society 52 (2008): 1114.

    Kim, Jin Yong, et al. "Electromagnetic shielder compatible ZnO transparent conducting oxides hybridized with various sizes of Ag metal nanoparticles." Ceramics International 34.4 (2008): 1055-1058.

    Lee, Seungjun, et al. "Characteristics of Hafnium?Zirconium?Oxide Film Treated by Remote Plasma Nitridation." Journal of The Electrochemical Society 155.7 (2008): H516-H519.

    Lee, Keunwoo, et al. "Characteristics of cobalt films deposited by metal organic chemical vapor deposition method using dicobalt hexacarbonyl tert-butylacetylene." Japanese Journal of Applied Physics 47.7R (2008): 5396.

    Cho, M-H., et al. "Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry." The Journal of chemical physics 129.3 (2008): 034705.

    Kwon, Kwang-Ho, et al. "Effective formation of interface controlled Y2O3 thin film on Si (1 0 0) in a metal?(ferroelectric)?insulator?semiconductor structure." Microelectronic Engineering 85.8 (2008): 1781-1785. Woo, Sanghyun, et al. "Characteristics of Metal?Oxide?Semiconductor Field-Effect Transistors with HfO2/SiO2/Si and HfO2/SiOxNy/Si Stack Structures Formed by Remote Plasma Technique." Japanese Journal of Applied Physics 47.8R (2008): 6196.

    Choi, Hyun-Ju, et al. "Surface control of CdSe nanocrystals by UV-exposure in air and successive thermal treatment under ultra high vacuum." Applied Surface Science 254.21 (2008): 6886-6889.

    Bang, Seokhwan, et al. "Physical and electrical properties of hafnium?zirconium?oxide films grown by atomic layer deposition." Journal of The Electrochemical Society 155.9 (2008): H633-H637.

    Jeon, Hyeongtag, and Youngdo Won. "The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process." Applied Physics Letters 93.12 (2008): 124104.

    Jeon, Sunyeol, et al. "Structural and electrical properties of ZnO thin films deposited by atomic layer deposition at low temperatures." Journal of the Electrochemical Society 155.10 (2008): H738-H743.

    Kim, Ji-Young, et al. "Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device." Japanese Journal of Applied Physics 47.10R (2008): 7775.

    Kim, Ji-Young, et al. "Effects of strained silicon layer on nickel (Germano) silicide for nanoscale complementary metal oxide semiconductor field-effect transistor device." Japanese Journal of Applied Physics 47.10R (2008): 7771.

    Kim, Hyuncheol, et al. "Carbon nanotube-incorporated direct-patternable SnO2 thin films formed by photochemical metal-organic deposition." Thin Solid Films 517.3 (2008): 1072-1076.

    Kim, Hyungchul, et al. "Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N2 and N2O Plasma Post-Treatments." Journal of The Electrochemical Society 155.12 (2008): G299-G303.

    Bang, Seokhwan, et al. "Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric." Semiconductor Science and Technology 24.2 (2008): 025008.

  • Lee, K., et al. "Semiconductor Devices, Materials, and Processing-Characteristics of Ti-Capped Co Films Deposited by a Remote Plasma AID Method Using Cyclopentadienylcobalt Dicarbonyl." Journal of the Electrochemical Society 154.10 (2007): H899.

    Lee, Keunwoo, et al. "Characteristics of cobalt films deposited by using a remote plasma ALD method with a CpCo (CO) 2 precursor." Journal of the Korean Physical Society 50.4 (2007): 1141-1146.

    Lee, Keun Woo, et al. "Cobalt Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method Using C12H10O6 (Co) 2 and CpCo (CO) 2." Solid State Phenomena. Vol. 124. Trans Tech Publications, 2007.

    Park, H. H., et al. "E Energy Conversion Related Materials-Study on the Electrical Properties of Direct-Patternable SBT Films Formed by Photochemical Metal-Organic Deposition." Materials Science Forum. Vol. 544. 2007.

    Park, Hyeong Ho, et al. "Study on the electrical properties of direct-patternable SBT films formed by photochemical metal-organic deposition." Materials science forum. Vol. 544. Trans Tech Publications, 2007.

    Cho, Seung-Chan, Hyeong-Tag Jeon, and Yang-Do Kim. "Characteristics of Hafnium Oxide Gate Dielectrics Deposited by Remote Plasma-enhanced Atomic Layer Deposition using Oxygen Plasma." Korean Journal of Materials Research 17.5 (2007): 263-267.

    Gong, Su-Cheol, et al. "A study of soluble pentacene thin film for organic thin film transistor." Journal of the Microelectronics and Packaging Society 14.3 (2007): 1-6.

    Back, In Jae, et al. "Field effect transistor with ZnS active layer on ITO/glass substrate." Materials science forum. Vol. 544. Trans Tech Publications, 2007.

    Kim, Hyoun Woo, et al. "SnO2 nanostructures synthesized on Co substrates." Solid State Phenomena. Vol. 124. Trans Tech Publications, 2007.

    Kuk, S. W., et al. "D Manufacturing Using a More Environmentally Friendly Process as well as Biomaterials-Chemical and Electrical Properties of ZnS Deposited with DEZ and H2S by Atomic Layer Deposition Method." Materials Science Forum. Vol. 544. 2007.

    Back, I. J., et al. "D Manufacturing Using a More Environmentally Friendly Process as well as Biomaterials-Field Effect Transistor with ZnS Active Layer on ITO/Glass Substrate." Materials Science Forum. Vol. 544. 2007.

    Kuk, Seoung Woo, et al. "Chemical and electrical properties of ZnS deposited with DEZ and H2S by atomic layer deposition method." Materials science forum. Vol. 544. Trans Tech Publications, 2007.

    Yoo, Byung-Chul, et al. "A Study of PMMA Gate Insulator Film for Organic Transistors." Proceedings of the KAIS Fall Conference. The Korea Academia-Industrial cooperation Society, 2007.

    Gong, Su-Cheol, et al. "유기박막트랜지스터 적용을 위한 Soluble Pentacene 박막의 특성연구." Journal of the Microelectronics & Packaging Society 14.3 (2007): 1-6.

    Kim, Keunjun, et al. "Surfaces, Interfaces and Films-Comparison of Co Films Deposited by Remote Plasma Atomic Layer Deposition Method with Cyclopentadienylcobalt Dicarbonyl (CpCo (CO) 2) and Dicobalt." Japanese Journal of Applied Physics-Part 2 Letters 46.8-11 (2007): L173.

    Kim, Seokhoon, et al. "Effect of buffer layer for HfO2 gate dielectrics grown by remote plasma atomic layer deposition." Journal of The Electrochemical Society 154.2 (2007): H97-H101.

    Kim, Keunjun, et al. "Comparison of Co films deposited by remote plasma atomic layer deposition method with cyclopentadienylcobalt dicarbonyl [CpCo (CO) 2] and dicobalt octacarbonyl [Co2 (CO) 8]." Japanese journal of applied physics 46.3L (2007): L173.

    Kim, Keunjun, et al. "Characteristics of cobalt thin films deposited by remote plasma ALD method with dicobalt octacarbonyl." Journal of The Electrochemical Society 154.3 (2007): H177-H181.

    Lee, Seungho, and Hyeongtag Jeon. "Characteristics of an Al2O3 thin film deposited by a plasma enhanced atomic layer deposition method using N2O plasma." Electron Mater Lett 3.1 (2007): 17-21.

    Kim, Inhoe, et al. "Thermodynamic properties and interfacial layer characteristics of Hf O 2 thin films deposited by plasma-enhanced atomic layer deposition." Applied physics letters 90.22 (2007): 222101.

    Cho, Seungchan, et al. "Barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition using tetrakis (diethylamino) zirconium precursor." Japanese Journal of Applied Physics 46.7R (2007): 4085.

    Kim, Seokhoon, and Hyeongtag Jeon. "HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method." ECS Transactions 3.15 (2007): 89-98.

    Jeon, Hyeong-Tag, et al. "Apparatus for generating remote plasma." U.S. Patent Application No. 11/703,621.

    Kim, Hyungchul, et al. "Effects of N2 and N2O Post-Plasma Treatments on Hafnium Silicate Gate Dielectrics Grown by Remote Plasma Technique." Meeting Abstracts. No. 20. The Electrochemical Society, 2007.

    Lee, SeungJun, et al. "Characteristics of HfO2 and ZrO2 Mixed Oxide Film Grown by Atomic Layer Deposition." Meeting Abstracts. No. 17. The Electrochemical Society, 2007.

    Lee, Keunwoo, et al. "Characteristics of Ti-capped Co films deposited by a remote plasma ALD method using cyclopentadienylcobalt dicarbonyl." Journal of The Electrochemical Society 154.10 (2007): H899-H903.

    Kim, Seokhoon, et al. "Atomic layer deposited HfO 2/HfSi x O y N z stacked gate dielectrics for metal-oxide-semiconductor structures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 25.6 (2007): 1922-1927.

    Kim, Hyuncheol, et al. "Study of Ag nanoparticles incorporated SnO2 transparent conducting films by photochemical metal?organic deposition." Thin Solid Films 516.2-4 (2007): 198-202.

  • Koo, Jaehyoung, et al. "Characteristics of Al 2 O 3 thin films deposited using dimethylaluminum isopropoxide and trimethylaluminum precursors by the plasma-enhanced atomic-layer deposition method." Journal of the Korean Physical Society 48.1 (2006): 131-136.

    Cho, Kyu-Chul, Hyeong-Tag Jeon, and Jea-Gun Park. "Effect of the hydroxyl-ethyl-cellulose concentration in a silicon wafer polishing slurry on the wafer surface roughness." Journal of the Korean Physical Society 48.4 (2006): L507-L509.

    Kang, Hyunseok, et al. "Effects of remote plasma pre-oxidation of Si substrates on the characteristics of ALD-deposited HfO2 gate dielectrics." Electrochemical and solid-state letters 9.6 (2006): G211-G214.

    Kim, S., et al. "Semiconductor Devices, Materials, and Processing-Thermal Stability of ALD HfO2 Thin Films and Interfacial Layers on the Oxynitride Underlayer Formed Using Remote Plasma." Electrochemical and Solid State Letters 9.2 (2006): G40.

    Cho, Kyu-Chul, Hyeong-Tag Jeon, and Jea-Gun Park. "Dependence of Nanotopography Impact on Fumed Silica and Ceria Slurry Added with Surfactant for Shallow Trench Isolation Chemical Mechanical Polishing." Korean Journal of Materials Research 16.5 (2006): 308-311.

    Choi, Jihoon, et al. "Papers from the 12th Canadian Semiconductor Technology Conference-Characterization of Devices and Materials-Characteristics of remote plasma atomic layer-deposited HfO2 films on O2 and N2." Journal of Vacuum Science and Technology-Section A 24.3 (2006): 678-681.

    Kim, Inhoe, et al. "A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications." Japanese journal of applied physics 45.2R (2006): 919.

    Koo, Jaehyoung, et al. "Characteristics of Al 2 O 3 thin films deposited using dimethylaluminum isopropoxide and trimethylaluminum precursors by the plasma-enhanced atomic-layer deposition method." Journal of the Korean Physical Society 48.1 (2006): 131-136.

    Kim, Seokhoon, et al. "Thermal stability of ALD HfO2 thin films and interfacial layers on the oxynitride underlayer formed using remote plasma." Electrochemical and solid-state letters 9.2 (2006): G40-G43.

    Jeon, Hyeongtag. "MRS-Korea to Host IUMRS-ICA-2006 in September." MRS BULLETIN 31 (2006). Kim, Inhoe, et al. "A comparison of Al2O3/HfO2 and Al2O3/ZrO2 bilayers deposited by the atomic layer deposition method for potential gate dielectric applications." Japanese journal of applied physics 45.2R (2006): 919.

    Hong, Hyungseok, et al. "Characteristics of Atomic Layer Deposited HfO2 Films using Remote Plasma on the Pre-deposited Hf Metal Layer." Meeting Abstracts. No. 9. The Electrochemical Society, 2006.

    Kim, Seokhoon, et al. "Effect of Nitrided Silicate as a Buffer Layer for HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition." Meeting Abstracts. No. 9. The Electrochemical Society, 2006.

    Choi, Jihoon, et al. "Effects of N2 RPN on the structural and electrical characteristics of remote plasma atomic layer-deposited HfO2 films." Electrochemical and solid-state letters 9.3 (2006): F13-F15.

    Lee, Yujin, et al. "Effect of nitrogen incorporation in HfO2 films deposited by plasma-enhanced atomic layer deposition." Journal of The Electrochemical Society 153.4 (2006): G353-G357.

    Kim, Seokhoon, et al. "Characteristics of Hf O 2 thin films deposited by plasma-enhanced atomic layer deposition using O 2 plasma and N 2 O plasma." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 24.3 (2006): 1088-1093.

    Kang, Hyunseok, et al. "Effects of remote plasma pre-oxidation of Si substrates on the characteristics of ALD-deposited HfO2 gate dielectrics." Electrochemical and solid-state letters 9.6 (2006): G211-G214.

    Kim, Seokhoon, et al. "Remote Plasma Atomic Layer Deposition of HfO2 Thin Films Using the Alkoxide Precursor Hf (mp) 4." Electrochemical and solid-state letters 9.6 (2006): G200-G203.

    Jeon, Hyeongtag. "HfO2 Thin Film Deposited by Remote Plasma Atomic Layer Deposition Method." Meeting Abstracts. No. 21. The Electrochemical Society, 2006.

    Jeong, Wooho, et al. "Barrier Characteristics of HfN Films Deposited by Using the Remote Plasma-Enhanced Atomic Layer Deposition Method." Meeting Abstracts. No. 21. The Electrochemical Society, 2006.

    Kang, Hyunseok, et al. "Characteristics of the HfO2 Thin Films Grown by Remote Plasma Atomic Layer Deposition Method on the Plasma Oxidized Si Substrate." ECS Transactions 1.5 (2006): 459-464.

    Choi, Jihoon, et al. "Effects of N 2 remote plasma nitridation on the structural and electrical characteristics of the Hf O 2 gate dielectrics grown using remote plasma atomic layer deposition methods." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 24.4 (2006): 900-907.

    Kim, Sung Bea, and Hyeongtag Jeon. "Characteristics of the post-etch polymer residues formed at the via hole and polymer removal using a semi-aqueous stripper." Journal of the Korean Physical Society 49.5 (2006): 1991-1997.

  • Koo, Jaehyoung, and Hyeongtag Jeon. "Characteristics of an Al 2 O 3/HfO 2 bilayer deposited by atomic layer deposition for gate dielectric applications." Journal of the Korean Physical Society 46.4 (2005): 945-950.

    Koo, Jaehyoung, et al. "Characteristics of hafnium-aluminum-oxide thin films deposited by using atomic layer deposition with various aluminum compositions." Journal of the Korean Physical Society 47.3 (2005): 501-507.

    Kim, Ju Youn, Hee Ok Park, and Hyeongtag Jeon. "Characteristics and compositional variation of TiN films deposited by remote PEALD on contact holes." Journal of The Electrochemical Society 152.1 (2005): G29-G34.

    Cho, Kyu-Chul, Hyeong-Tag Jeon, and Jea-Gun Park. "Slip formation in 300-mm polished and epitaxial silicon wafers annealed by rapid thermal annealing." Journal of the Korean Physical Society 46.4 (2005): 1001-1006.

    Cho, Seung Chan, et al. "Characteristics of ZrN Films Deposited by Remote PEALD Method Using TDEAZ Precursor." Korean Journal of Materials Research 15.9 (2005): 594-597.

    Kim, Seokhoon, et al. "Surface characteristics of indium-tin oxide cleaned by remote plasma." Japanese journal of applied physics 44.2R (2005): 1041.

    Lee, Chang Ki, et al. "Thermal-stress stability of yttrium oxide as a buffer layer of metal-ferroelectric-insulator-semiconductor field effect transistor." Thin Solid Films 473.2 (2005): 335-339.

    Kim, Ju Youn, et al. "Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD." Electrochemical and solid-state letters 8.3 (2005): G82-G84.

    Koo, Jaehyoung, and Hyeongtag Jeon. "Characteristics of an Al 2 O 3/HfO 2 bilayer deposited by atomic layer deposition for gate dielectric applications." Journal of the Korean Physical Society 46.4 (2005): 945-950.

    Park, Myungjin, et al. "Suppression of parasitic Si substrate oxidation in Hf O 2?ultrathin-Al 2 O 3?Si structures prepared by atomic layer deposition." Applied Physics Letters 86.25 (2005): 252110.

    Kim, Jinwoo, et al. "Characteristics of Hf O 2 thin films grown by plasma atomic layer deposition." Applied Physics Letters 87.5 (2005): 053108.

    Seo, Hyungtak, et al. "Characterization of remote inductively coupled CH 4?N 2 plasma for carbon nitride thin-film deposition." Journal of applied physics 98.4 (2005): 043308.

    Kim, Jinwoo, et al. "Composition, structure, and electrical characteristics of Hf O 2 gate dielectrics grown using the remote-and direct-plasma atomic layer deposition methods." Journal of applied physics 98.9 (2005): 094504.

    Won, Youngdo, et al. "Initial reaction of hafnium oxide deposited by remote plasma atomic layer deposition method." Applied Physics Letters 87.26 (2005): 262901.

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    Park, Jin Yong, et al. "Comparison of TiN and TiN/Ti/TiN multilayer films for diffusion barrier applications." Journal of the Korean Physical Society 42.6 (2003): 817-820.

    Andreev, A., et al. "Abd El Meguid, EA, 53 Abd El Rehim, SS, 53." Thin Solid Films 443 (2003): 151.

    Kim, Sung Bae, et al. "Characteristics of polymer residues formed at the via hole and photoresist ashing properties of remote oxygen/nitrogen plasma." Japanese journal of applied physics 42.3R (2003): 1212.

    Song, Jongkook, et al. "Removal of the polymer formed at via hole with via etching stopped on an Al layer structure." Japanese journal of applied physics 42.3R (2003): 1216.

    Kim, Ju Youn, Yangdo Kim, and Hyeongtag Jeon. "Characteristics of TiN films deposited by remote plasma-enhanced atomic layer deposition method." Japanese journal of applied physics 42.4B (2003): L414.

    Kim, Dae-Gun, et al. "Hydrogen-reduction behavior and microstructural characteristics of WO3?CuO powder mixtures with various milling time." Journal of Alloys and Compounds 354.1-2 (2003): 239-242.

    Ryu, Kyoungmin, et al. "Low-temperature growth of carbon nanotube by plasma-enhanced chemical vapor deposition using nickel catalyst." Japanese journal of applied physics 42.6R (2003): 3578.

    Kim, Ju Youn, et al. "Comparison of TiN films deposited using tetrakisdimethylaminotitanium and tetrakisdiethylaminotitanium by the atomic layer deposition method." Japanese journal of applied physics 42.7R (2003): 4245.

    Youm, Minsoo, et al. "Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics." Japanese journal of applied physics 42.8R (2003): 5010.

    Park, Jea-Gun, et al. "Surfactant effect on oxide-to-nitride removal selectivity of nano-abrasive ceria slurry for chemical mechanical polishing." Japanese journal of applied physics 42.9R (2003): 5420.

    Sim, Hyun Sang, et al. "A new pulse plasma enhanced atomic layer deposition of tungsten nitride diffusion barrier for copper interconnect." Japanese journal of applied physics 42.10R (2003): 6359.

    Chang, Ho Jung, et al. "Crystalline and electrical properties of (Bi, La) Ti3O12 thin films coated on Al2O3/Si substrates." Thin Solid Films 443.1-2 (2003): 136-143.

    Kim, Joo Young, et al. "Development of a low-power static random access memory with a spacer-on-stopper structure using Co salicide." Journal of the Korean Physical Society 43.5 I (2003): 802-806.

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    Kim, Ju Youn, et al. "Comparison of TiN and TiAlN as a diffusion barrier deposited by atomic layer deposition." Journal of the Korean Physical Society 40.1 (2002): 176-179.

    Kim, Sung Bae, et al. "Remote RF oxygen plasma cleaning of the photoresist residue and RIE-related fluorocarbon films." Journal of the Korean Physical Society 41.2 (2002): 247-250.

    Kim, Dong Joon, et al. "Characteristics of plasma enhanced chemical vapor deposited W?B?N thin films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 20.1 (2002): 194-197.

    Soh, Hyun, Hyeong-Tag Jeon, and Young-Chai Kim. "In-situ Surface Analysis and Photo-Resist Cleaning by Remote Plasma." Korean Chemical Engineering Research 40.3 (2002): 382-387.

    Koo, Jaehyoung, et al. "Plasma Enhanced Atomic Layer Deposition of ZrO 2 Gate Dielectric." MRS Online Proceedings Library Archive 716 (2002).

    Jung, M. Y., et al. "FIELD EMISSION STUDY OF Ti-SILICIDE ARRAY." Cold Cathodes II: Proceedings of the International Symposium. Vol. 2002. The Electrochemical Society, 2002.

    소현, 전형탁, and 김영채. "원거리 플라즈마에 의한 Photo-Resist 세정과 In-situ 표면 분석." HWAHAK KONGHAK 40.3 (2002): 382-387.

    Kim, Ju Youn, et al. "Compositional variations of TiAlN films deposited by metalorganic atomic layer deposition method." Japanese journal of applied physics 41.2R (2002): 562.

    Katoh, Takeo, et al. "The nanotopography effect of improved single-side-polished wafer on oxide chemical mechanical polishing." Japanese journal of applied physics 41.4B (2002): L443.

    Koo, Jaehyoung, Yangdo Kim, and Hyeongtag Jeon. "ZrO2 gate dielectric deposited by plasma-enhanced atomic layer deposition method." Japanese journal of applied physics 41.5R (2002): 3043.

    Kim, Yang-Do, et al. "Field-emission activation on boron-doped chemical-vapor-deposited polycrystalline diamond films." Japanese journal of applied physics 41.5R (2002): 3081.

    Jeon, Hyeongtag, et al. "Analysis of Ti-silicide formation with a thin Ta interlayer on Si (100)." Journal of the Korean Physical Society 40.5 (2002): 903-907.

    Kim, Hyo Kyeom, et al. "Metalorganic atomic layer deposition of TiN thin films using TDMAT and NH 3." Journal of the Korean Physical Society 41.5 (2002): 739-744.

    Sim, Hyun Sang, Yong Tae Kim, and Hyeongtag Jeon. "Effects of NH3 plasma treatment on methyl silsequioxane for copper multi-level interconnect." Japanese journal of applied physics 41.6R (2002): 3658.

    Park, Jea-gun, et al. "Wafer Flatness Requirements for Future Technology Wafer Flatness Requirements for Future Technology, 1999." 電子情報通信??技術?究報告. ED, 電子デバイス 102.175 (2002): 105-109.

    Seo, Hyungtak, et al. "Low temperature remote plasma cleaning of the fluorocarbon and polymerized residues formed during contact hole dry etching." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 20.4 (2002): 1548-1555.

    Kim, Yangdo, et al. "Characteristics of ZrO 2 gate dielectric deposited using Zr t?butoxide and Zr (NEt 2) 4 precursors by plasma enhanced atomic layer deposition method." Journal of applied physics 92.9 (2002): 5443-5447.

  • Kang, Mi Hyun, Yang Do Kim, and Hyeong Tag Jeon. "In-situ hydrogen and oxygen plasma purification of carbon nanotubes." Journal of the Korean Physical Society 39.6 (2001): 1072-1075.

    Song, Kie Moon, et al. "Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition." MRS Online Proceedings Library Archive 697 (2001).

    Do Kim, Young, et al. "Synthesis of Cu dispersed Al2O3 nanocomposites by high energy ball milling and pulse electric current sintering." Scripta materialia 44.2 (2001): 293-297.

    Choi, Seong S., S. B. Kim, and H. T. Jeon. "Field Emission Study of Ti-silicide Field Emitter using KOH Anisotropic Etching." APS Meeting Abstracts. 2001.

    Uhm, Jangwoong, and Hyeongtag Jeon. "TiN diffusion barrier grown by atomic layer deposition method for Cu metallization." Japanese Journal of Applied Physics 40.7R (2001): 4657.

    Koo, Jaehyoung, et al. "Study on the characteristics of TiAlN thin film deposited by atomic layer deposition method." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19.6 (2001): 2831-2834.

    Park, Jea Gun, et al. "Effects of film type and wafer shape on oxide CMP characteristics." Journal of the Korean Physical Society 39.SUPPL. Part 1 (2001).

    Lee, J. H., et al. "Growth of hexagonal GaN films on Si substrates by MOCVD using a novel single precursor." Journal of the Korean Physical Society 39.SUPPL. Part 1 (2001).

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    Jeon, Hyeongtag, et al. "Atomic Layer Deposition of TiN on Si (100) and (111) Substrates." MRS Online Proceedings Library Archive 616 (2000).

    Kim, Younghyun, et al. "Effect of TiO 2 Addition on the Secondary Electron Emission and Discharge Properties of MgO Protective Layer." MRS Online Proceedings Library Archive 621 (2000).

    Jeon, Hyeongtag, et al. "Study on the characteristics of TiN thin film deposited by the atomic layer chemical vapor deposition method." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18.4 (2000): 1595-1598.

    Jeon, Hyeongtag, et al. "Effects of a Ta interlayer on the phase transition of TiSi 2 on Si (111)." Journal of Applied Physics 88.5 (2000): 2467-2471.

    Do Kim, Young, et al. "Formation of nanocrystalline Fe?Co powders produced by mechanical alloying." Materials Science and Engineering: A 291.1-2 (2000): 17-21.

    Heo, Jinhwa, and Hyeongtag Jeon. "The growth of co-silicide using a chemical oxide on off-axis Si (100) substrates." Journal of the Korean Physical Society 37.6 (2000): 1057-1061.

    Heo, Jinhwa, and Hyeongtag Jeon. "The growth of CoSi2 through an oxide layer: dependence on Si (100) surface structure." Thin Solid Films 379.1-2 (2000): 265-271.

  • Yoon, Sang Hyun, and Hyeong Tag Jeon. "A study on the change in the phase transition temperature of TiSi 2 by adding the Zr element on different Si substrates." Journal of the Korean Physical Society 34.4 (1999): 365-370.

    Jung, Bokhee, et al. "Reduction of the transition temperature of C54 TiSi 2 through a Ta interlayer." Journal of the Korean Physical Society 35.SUPPL. 4 (1999).

    Jung, Bokhee, et al. "Reduction of the phase transition temperature of TiSi 2 on Si (111) using a Ta interlayer." MRS Online Proceedings Library Archive 564 (1999).

    Cha, Taeho, et al. "Study on the transition temperature and phase formation sequence in TiZr silicides on Si (100)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17.2 (1999): 332-337.

    Kang, Y. B., et al. "Properties of the plasma produced by multi-cathode electron beam plasma sources." Thin solid films 341.1-2 (1999): 9-12.

    Kim, D. W., et al. "Fabrication of field emission Si-tip array using reduced submicron masks generated by isotropic etching of mask patterns." Microelectronic engineering 46.1-4 (1999): 423-426.

    Shin, Youngchul, Choelhwyi Bea, and Hyeongtag Jeon. "Interface structure of epitaxial CoSi2 films using the chemical oxide layer on Si (1 0 0) substrate." Journal of materials science letters 18.9 (1999): 731-734.

    Kim, Dongwook, and Hyeongtag Jeon. "The growth of CoSi2 using a Co/Zr bilayer on different Si substrates." Thin Solid Films 346.1-2 (1999): 244-250.

    Uhm, Jangwoong, et al. "The characteristics of TiN films deposited by cyclic chemical vapor deposition." Journal of the Korean Physical Society 35.SUPPL. 4 (1999).

    Park, S. G., and Hyeongtag Jeon. "The formation of CoSi2 thin layer on crystalline and amorphous Si substrates using CoZr alloy layer." Journal of the Korean Physical Society 34.SUPPL. 3 (1999).

    Choi, Hyungseok, and Hyeongtag Jeon. "A study of the effect of ca impurities on the microrpughness of a Si substrate and on the electrical characteristics of a gate oxide." Journal of the Korean Physical Society 35.SUPPL. 2 (1999).

  • Choi, Baik-Il, and Hyeong-Tag Jeon. "A Study on the Removal of Cu and Fe Impurities on Si Substrate." Korean Journal of Materials Research 8.9 (1998): 837-842.

    Choi, Won-Seop, et al. "Oxidation Behavior at the Interface between E-beam Coated $ ZrO_ {2} $-7wt.% $ Y_ {2} O} _ {3} $ and Plasma Sprayed CoNiCrAlY." Korean Journal of Materials Research 8.6 (1998): 538-544.

    Yoon, Sanghyun, and Hyeongtag Jeon. "Suppression of the Phase Transition and Agglomeration of TiSi 2 by Addition of Zr Element." MRS Online Proceedings Library Archive 514 (1998).

    Jeon, Hyeongtag, et al. "TiN Diffusion Barrier Formation by Pulsed Source Chemical Vapor Deposition method." MRS Online Proceedings Library Archive 514 (1998).

    Kim, Dong-Wook, and Hyeong-Tag Jeon. "Formation of the $ CoSi_ {2} $ using Co/Zr Bilayer on the Amorphous and the Single Crystalline Si Substrates." Korean Journal of Materials Research 8.7 (1998): 621-627.

    Jeon, Hyeongtag, and Sangbeom Kim. "Microstructural Properties of ZrSi2 on Si (100)." Japanese journal of applied physics 37.9R (1998): 4747.

    Bae, Choelhwyi, et al. "Abnormal Grain Growth of Niobium?Doped Strontium Titanate Ceramics." Journal of the American Ceramic Society 81.11 (1998): 3005-3009.

    Choi, Baikil, and Hyeongtag Jeon. "Removal of Cu impurities on a Si substrate by using (H 2O 2+ HF) and (UV/O 3+ HF)." Journal of the Korean Physical Society 33.5 (1998): 579-583.

  • Jeon, Hyeongtag, and Baikil Choi. "Comparison of Removal Efficiency of Cu Impurity on Si (100) Depending on the Cleaning Splits of (UV/O 3+ HF) and (H 2 O 2+ HF)." MRS Online Proceedings Library Archive 477 (1997).

    Park, Jong-Wan, et al. "The effects of pretreatment, CH4 gas ratio and bias potential on the microstructure of microwave plasma enhanced chemical vapor deposited diamond thin films." Japanese journal of applied physics 36.3R (1997): 1238.

    Jeon, Hyeongtag, Gangjoong Yoon, and R. J. Nemanich. "Dependence of the C49?C54 TiSi2 phase transition temperature on film thickness and Si substrate orientation." Thin Solid Films 299.1-2 (1997): 178-182.

    Ahn, Taehang, et al. "The removal of intentionally contaminated Cu impurities on Si substrate using remote H-plasma treatments." Japanese journal of applied physics 36.9R (1997): 5779.

    Lee, Wonjun, and Hyeongtag Jeon. "The effect of UV/ozone and HF on the removal of metallic impurities and the surface roughness on Si (100) substrate." Journal of the Korean Physical Society 30.SUPPL. PART 1 (1997).

    Lee, Sukjae, Hwackjoo Lee, and Hyeongtag Jeon. "Amorphous titanium silicide phase formation by surface microroughness on Si (100)." Japanese journal of applied physics 36.12R (1997): 7317.

    Ahn, Taehang, et al. "The effects of the remote H-plasma treatments on the transition metallic impurities contaminated on the Si substrate." Journal of the Korean Physical Society 30.SUPPL. PART 1 (1997).

    Lee, Chongmu, et al. "Removal of Cu contaminants from Si surfaces using dry cleaning techniques." Journal of the Korean Physical Society 30.SUPPL. PART 1 (1997).

  • Jeon, Hyeongtag, et al. "Amorphous Phase Formation of Titanium Silicide on The 4° off-Axis and on-Axis Si (100) Substrates." MRS Online Proceedings Library Archive 427 (1996).

    Jeon, Hyeongtag, Hyungbok Choi, and Taehang Ahn. "The removal of metallic impurities with using UV/O3 and a HF chemical solution." Journal of the Korean Physical Society 29.6 (1996): 781-785.
  • Jeon, Hyeongtag, et al. "Effects of UV/O 3 and SC1 Steps for the HF Last Silicon Wafer Cleaning." MRS Online Proceedings Library Archive 386 (1995).

    Yoon, Gang-Joong, and Hyeong-Tag Jeon. "The Effects of Ti Film Thicknesses and Si Substrate Orientations on Phase Transition of Tisi $ _2$." Korean Journal of Materials Research 5.7 (1995): 820-828.
  • Kang, E. Y., et al. "Phase Transition and Formation of TiSi {sub 2} Codeposited on Atomically Clean Si (111)." (1994).

    Jeon, H. T., and R. J. Nemanich. "Phase Stability and Epitaxy of C49 TiSi {sub 2} on Si (111)." (1994).
  • Jeon, Hyeongtag, et al. "Phase Transition and Formation of TiSi 2 Codeposited on Atomically Clean Si (111)." MRS Online Proceedings Library Archive 311 (1993).
  • Nemanich, R. J., et al. "Nucleation and morphology of TiSi 2 on Si." MRS Online Proceedings Library Archive 260 (1992).

    Nemanich, R. J., et al. "Interface structure of epitaxial TiSi~ 2 on Si (111)." PROCEEDINGS OF THE ANNUAL MEETING-ELECTRON MICROSCOPY SOCIETY OF AMERICA. SAN FRANCISCO PRESS, 1992.

    Jeon, Hyeongtag. "Initial reactions, surface and interface morphologies, phase transition, and epitaxial growth of titanium silicide formed by thin film reaction in ultrahigh vacuum." (1992): 1662-1662.

    Jeon, Hyeong Tag, Jae Won Cho, and R. J. Nemanich. "Session 1-Cleaning: Atomically clean Si surface and its reaction with Ti." Semiconductor Wafor Cleaning and Surface Characterization (1992): 126-129.

    Banjo, Toshinobu, et al. "プラズマ?核融合??誌= Journal of plasma and fusion research 75 (4), 350-363, 1999-04." J. Electrochem. Soc 139 (1992): 250.

    Jeon, Hyeongtag, et al. "Morphology and phase stability of TiSi2 on Si." Journal of applied physics 71.9 (1992): 4269-4276.

  • Spellman, L. M., et al. "Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide." MRS Online Proceedings Library Archive 221 (1991).

    Humphreys, T. P., et al. "NR Parikh." Mater. Res. Soc. Syrup. Proc. Vol. 202. 1991.

    Jeon, Hyeongtag, et al. "Thickness Dependence of Epitaxial TiSi 2 on Si (111)." MRS Online Proceedings Library Archive 202 (1990).

    Humphreys, T. P., et al. "Characterization of Titanium Silicide Contacts Deposited on Semiconducting Diamond Substrates." Materials Science Monographs. Vol. 73. Elsevier, 1991. 353-358.

    Park, Jong-Wan, et al. "J. Jpn. Mater. Sci. J. Jpn. Mater. Sci. 28 (3), 151, 1991." J. Jpn. Mater. Sci 28.3 (1991): 151.

    Cho, Jaewon, et al. "Surface electronic states of low?temperature H?plasma cleaned Si (100)." Applied physics letters 59.16 (1991): 1995-1997.

  • Jeon, Hyeongtag, and R. J. Nemanich. "Surface morphology of TiSi2 on silicon." Thin Solid Films 184.1-2 (1990): 357-363.

    Humphreys, T. P., et al. "Growth and Characterization of Heteroepitaxial Nickel Films on Diamond Substrates." MRS Online Proceedings Library Archive 202 (1990).

    Jeon, Hyeongtag, et al. "Epitaxial Growth and Stability of C49 TiSi 2 ON Si (111)." MRS Online Proceedings Library Archive 198 (1990).

    Jeon, Hyeongtag, et al. "Interface Morphology, Nucleation and Island Formation of Tisi 2 on Si (111)." MRS Online Proceedings Library Archive 181 (1990).

    Jeon, Hyeongtag. "Initial reactions, surface and interface morphologies, phase transition, and epitaxial growth of titanium silicide formed by thin film reaction in ultrahigh vacuum." (1992): 1662-1662.

    Jeon, Hyeongtag, et al. "Thickness Dependence of Epitaxial TiSi 2 on Si (111)." MRS Online Proceedings Library Archive 202 (1990).

  • Aldrich, D. B., et al. "X-Ray Absorption Studies of Titanium Silicide Formation at the Interface of Ti Deposited on Si." MRS Online Proceedings Library Archive 159 (1989).

    Jeon, Hyeongtag, et al. "Surface Morphologies and Interfaces of TiSi 2 Formed from UHV Deposited Ti on Si." MRS Online Proceedings Library Archive 160 (1989).

    Nemanich, R. J., R. W. Fiordalice, and Hyeongtag Jeon. "Raman scattering characterization of titanium silicide formation." IEEE Journal of Quantum Electronics 25.5 (1989): 997-1002.

  • Jeon, Hyeong-Tag, Bo-Young Hur, and Soo-Yong Kim. "A Study of the CV graphite cast iron with small additions of a Al-Cu alloy." Journal of Korea Foundry Society 3.4 (1983): 239-247.
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